| PART |
Description |
Maker |
| CPH5902 CPH5902G-TL-E CPH5902H-TL-E EN6962C |
N-Channel JFET and NPN Bipolar Transistor 15V, 10 to 32mA, 50V, 150mA, Composite type CPH5
|
ON Semiconductor
|
| CPH5901 CPH5901G-TL-E CPH5901F-TL-E |
N-Channel JFET and NPN Bipolar Transistor 15V, 6 to 20mA, 50V, 150mA, Composite type CPH5
|
ON Semiconductor
|
| FMY4A |
Collector-emitter voltage: Tr1=-50V,Tr2=50V, Collector current: Tr1=-150mA,Tr2=150mA
|
TY Semiconductor Co., Ltd
|
| HN2C01FU HN2C01FUGR |
TRANSISTOR | BJT | PAIR | NPN | 50V V(BR)CEO | 150MA I(C) | TSOP 晶体管|晶体管|一对|叩| 50V五（巴西）总裁| 150毫安一c）|的TSOP
Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Omron Electronics, LLC
TOSHIBA
|
| IMX25T110 |
NPN NPN High hFE & Muting Transistor
|
ROHM
|
| 2SA1774 2SA1774EB 2SA1576UB 2SA1576A |
PNP -150mA -50V General Purpose Transistors
|
Rohm
|
| 2SC2458LGR 2SC2458LO |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAK 晶体管|晶体管|叩| 50V五（巴西）总裁| 150毫安一（c）| SPAK
|
Toshiba, Corp.
|
| 2SC2960 2SA1481 2SC2960E 2SC2960G 2SC2960F |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | SPAKVAR 晶体管|晶体管|叩| 50V五（巴西）总裁| 150毫安一（c）| SPAKVAR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| RT2N63M |
Composite Transistor For Muting Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
| RTAN230C RTAN230M RTAN230T2 RTAN230U RTAN230X |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| RTAN140C RTAN140M RTAN140T2 RTAN140U RTAN140X |
TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
